[Yang Jie Science and Technology: joint Research and Development Center for wide Bandgap Power device Technology with Southeast University] June 8 / PRNewswire-FirstCall-Asianet /-- Yang Jie Science and Technology announced that it will jointly build a joint research and development center for wide bandgap power device technology with Southeast University to carry out in-depth cooperation in the field of power semiconductors (especially in the field of wide bandgap power devices). Develop world-class power semiconductor chips with independent intellectual property rights and meet the needs of the market and applications, including development strategy research, silicon-based power device design, wide band gap power device design and other projects.